Edge structure of power semiconductor component includes electrically- conducting layer deposited on parts of insulating layer in contact with region between conductivity types.

摘要

On parts of the insulation layer an electrically conducting layer is deposited, which contacts part of the first region of the second conductivity type. The side wall has concave curvature transitioning into the trench base, where a further trench is arranged. An independent claim is included for the corresponding method of manufacture.