| 摘要 |
<p>After forming an interlayer insulating film (1) and a CMP stopper film, a wiring groove is formed. A barrier metal film (4) and a Cu film (5) are embedded in the wiring groove and then, the Cu film (5) and the barrier metal film (4) are planarized by CMP or the like until the CMP stopper film is exposed, thereby forming a lower layer wiring (17). Next, the CMP stopper is removed by dry etching, whereby the surface of the lower layer wiring (17) relatively protrudes from the surrounding portion. An etching stopper film (6) is formed on the entire surface and then, a via plug (18) is formed. An upper layer wiring (19) is formed in the same manner as the lower layer wiring (17).</p> |
