SEMICONDUCTOR PROCESS AND COMPOSITION FOR FORMING BARRIER MATERIAL FOR COVERING COPPER

摘要

PROBLEM TO BE SOLVED: To provide an electroless plating process for forming a barrier film such as cobalt-tungsten-boron film on copper interconnecting line in a semiconductor wafer. SOLUTION: The semiconductor process uses a plating bath of morpholine borane which provides higher thermal stability and range, allowing for greater compatibility with low k dielectric material. Mixed chelating agent with different stability constant with a metal source are used to a complex metal source, such as copper which dissolves into solution, if any. A fluoro surfactant is used as a wetting agent and a stabilizer. COPYRIGHT: (C)2005,JPO&NCIPI