发明名称 METHOD AND APPARATUS FOR DETECTING CORRECTION ANGLE IN NOTCH DEVIATION CORRECTION, AND METHOD AND APPARATUS FOR ADJUSTING DIRECTION OF SEMICONDUCTOR WAFER IN VACUUM VESSEL
摘要 PROBLEM TO BE SOLVED: To easily adjust the direction of a wafer with high precision. SOLUTION: A main controller 1 places the wafer on a platen in a vacuum vessel using a wafer carrying in/out device 5, and then checks the direction of the wafer using a checking device 10. The checking device 10 obtains the image of the wafer on the platen, and extracts the central point of the wafer and the representative point of a notch from the obtained image. Further, the checking device 10 computes the notch angle which indicates the direction of the notch seen from the central point of the wafer, and obtains the difference between the reference angle given by the main controller 1 and the notch angle. When the value of the obtained difference exceeds a predetermined error, this value of the difference is transmitted to the main controller 1 as a correction angle. The main controller 1 rotates the platen by the correction angle by giving the correction angle from the checking device 10 to a platen controller 6 to adjust the direction of the wafer. Then, the main controller drives an ion generation processor 7 to execute the ion implantation processing for the waver. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101307(A) 申请公布日期 2005.04.14
申请号 JP20030333521 申请日期 2003.09.25
申请人 OMRON CORP 发明人 NISHIGUCHI OSAMU
分类号 H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/68
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