SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor device. A lightly-doped first silicon carbide deposition film (2) of a first conductivity type is formed on a heavily-doped silicon carbide substrate (1) of the first conductivity type. Formed on the first silicon carbide deposition film (2) is a second silicon carbide deposition film (31) composed of a heavily-doped gate region including a first region (42) formed by selective partial removal. Formed on the second silicon carbide deposition film (31) is a third silicon carbide deposition film (32) composed of a second region which is formed by selective partial removal and has a width greater than that of the first region, a lightly-doped gate region of the second conductivity type, and a highly-doped source region (5) of the first conductivity type formed in the lightly-doped gate region of the second conductivity type. On the third deposition film (32), a gate insulating film (6) is formed. A gate electrode (7) is formed at least over the heavily-doped gate region, with the gate insulating film (6) interposed therebetween. In the heavily-doped base region of the first conductivity type, a third region composed of a highly-doped base region of the first conductivity type is formed on the second region.