SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having higher light-emitting efficiency and lower operating voltage and a method of manufacturing the same, in semiconductor light-emitting elements that emit light by the recombination of carriers in the semiconductors and methods of manufacturing the same.

SOLUTION: The semiconductor light-emitting element comprises: an n-type cladding layer; an optical-guide layer positioned on the n-type cladding layer; an active layer of a multiple quantum-well structure positioned on the optical-guide layer; a p-type overflow-prevention layer positioned on the active layer and having an impurity concentration of 5×1018cm-3or more and 3×1019cm-3or less; a p-type optical-guide layer positioned on the p-type overflow-prevention layer and having an impurity concentration of 1×1018cm-3or more and less than the p-type overflow prevention layer; and a p-type cladding layer positioned on the p-type optical-guide layer and having a band gap narrower than the p-type overflow prevention layer.

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