| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same capable of earning an oxide film area and preventing pole reversal sufficiently by a narrow trench, further, a region, sufficiently separated from a guard ring to secure a breakdown voltage and forming an annular region in which impurities are diffused sufficiently into the horizontal direction through a phosphorous glass diffusion system to prevent the pole reversal, can be enough to have only the width of pole reversal preventing region of an MIS structure (width of polysilicon) and which is capable of remarkably reducing the area of a surrounding region; by a method wherein a pole reversal preventing region of the MIS (MOS) structure is provided in the surrounding region to prevent the pole reversal of the surrounding region and reduce a leak current while the MIS(MOS) structure is formed by a trench type. SOLUTION: The semiconductor device is provided with an element region provided by diffusing predetermined impurities on the semiconductor substrate, the surrounding region at the outer periphery of the element region, a trench provided on the semiconductor substrate in the surrounding region, an insulating area provided along the trench and a conductive material buried in the trench while the conductive material is provided with the same potential as that of the substrate. The pole reversal preventing region of MIS(MOS) structure is provided. The width of the structure can be enough to have only the width of polysilicon whereby the oxide film area can be earned by the direction of depth of the trench. According to this method, the leak current can be reduced even when the area of the surrounding region is not wide, and the ON resistance of an MOSFET can be reduced since the element region is enlarged. COPYRIGHT: (C)2005,JPO&NCIPI |
