发明名称 METHOD FOR FORMING COPPER WIRING AND SEMICONDUCTOR WAFER WITH COPPER WIRING FORMED THEREIN
摘要 PROBLEM TO BE SOLVED: To provide a method for forming copper multilayered wiring wherein a bonding pad or a flip chip is formed while reducing the danger of copper contamination. SOLUTION: In a layer wherein bonding pad aluminum 21 is formed, the peripheral removal of an insulating film 17 and an insulating film 18 for pad formation for preventing peeling of the films is performed not over a wiring pattern portion (having residual Cu 16) that becomes a target of Cu removal in the layer of just lower copper wiring 14. Thus, the insulating film 17 and the insulating film 18 for pad formation are left outside the wiring pattern portion that becomes the target of Cu removal, and the wiring pattern portion that becomes the target of Cu removal, is covered with bonding pad aluminum 21, so that residual Cu 16 is not exposed to the surface. As a result, copper contamination is prevented in following bonding pad shaping steps. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101450(A) 申请公布日期 2005.04.14
申请号 JP20030335522 申请日期 2003.09.26
申请人 NEC ELECTRONICS CORP 发明人 TOHARA MASATO;YAMAMOTO YOSHIAKI
分类号 H01L23/52;H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L23/52
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