METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the formation of an irregular shaped control gate etched incompletely due to the self-masking effect by a polymer by forming a control gate using an oxide film pattern exposing a control gate region. A tunneling oxide film(110), a polysilicon layer(125) for a gate electrode and a hard mask layer(135) are sequentially formed on a semiconductor substrate(100). A floating gate is formed by patterning the hard mask layer and the polysilicon layer for a gate electrode. A spacer composed of a stacking structure of ONO(Oxide-Nitride-Oxide) nitride film(150) and ONO oxide film(155) is formed on the side wall of the floating gate. A core oxide film is formed on the top of an entire surface. The core oxide film is etched using a mask exposing a region predetermined as a region for a control gate. A polysilicon layer(185) for the control gate is formed on the top of the entire surface. An isotropic etch with respect to the polysilicon layer for the control gate is performed for exposing the core oxide film. The control gate is formed by removing the core oxide film.