发明名称 Method and device for the temperature control of surface temperatures of substrates in a CVD reactor
摘要 The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value is calculated, being measured in a particularly optical manner, and the level of the gas cushions is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures in relation to the average value lies within a predetermined temperature window.
申请公布号 US6878395(B2) 申请公布日期 2005.04.12
申请号 US20030436316 申请日期 2003.05.12
申请人 AIXTRON AG, 发明人 KAEPPELER JOHANNES
分类号 C23C16/52;C23C16/458;C23C16/46;C30B25/10;C30B25/14;C30B25/16;H01L21/205;(IPC1-7):C23C16/52 主分类号 C23C16/52
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