发明名称 |
Low-GIDL MOSFET structure and method for fabrication |
摘要 |
A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.
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申请公布号 |
US6878582(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20040876873 |
申请日期 |
2004.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOKUMACI OMER H.;DORIS BRUCE B.;GLUSCHENKOV OLEG;MANDELMAN JACK A.;RADENS CARL J. |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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