| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for growing a single crystal, ranging from the single crystal with a large diameter to the one with a small diameter. SOLUTION: The apparatus for growing the single crystal has a rotating ellipsoidal mirror, a heat source arranged at a focal point at one side of the rotating ellipsoidal mirror, a quartz tube surrounding a part to be heated of a common focal point F<SB>o</SB>at the other side, a raw material rod supported by an upper crystal-driving shaft in the quartz tube, and a seed crystal rod supported by a lower crystal-driving shaft. In the apparatus, the single crystal ranging the one with the large diameter to the one with the small diameter can be continually grown by parallelly arranging, as the heating sources 13, 14, a plurality of coil-like filaments 23a-23d in a flat state and a horizontal state, then selectively applying current to the coil-like filament 23a, 23b provided at the center part and filaments 23c and 23d provided at the left side and the right side, respectively, by individual power variable power sources 29, 30, varying the magnitude of radiation energy irradiated to a part to be heated and the cross sectional area of the heating area by gradually increasing electric power, and optimizing the height of the melting zone as the diameter is increased by moving the heating source upwardly. COPYRIGHT: (C)2005,JPO&NCIPI
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