发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR, PLASMA PROCESSING METHOD, AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To heat an object to be processed quickly and appropriately during plasma processing. SOLUTION: The plasma processing method is used to suck and hold a substrate by an electrostatic chuck and to process the surface of the substrate by plasma. The method includes a step (S10) to place the substrate on the upper side of an electrostatic chuck, a step (S12) to generate plasma in an apparatus and apply it to an object to be processed for heating, a step (S14) to judge whether or not a specified waiting time passes, and a step (S16) to suck the object by the electrostatic chuck the specified waiting time later (YES at S14). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005093716(A) 申请公布日期 2005.04.07
申请号 JP20030324969 申请日期 2003.09.17
申请人 NEC KYUSHU LTD 发明人 HONDA YUJI
分类号 C23C16/458;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/458
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