| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of a stress in a field region, and to prevent the induction of a dislocation in an active region in a semiconductor device. SOLUTION: In a manufacturing method for the semiconductor device, the manufacturing method comprises a step where the insular active region 10 is formed on a support substrate; a step where the field region 20 is formed so as to surround the periphery of the active region 10; a step when an opening section 112 is formed on a boundary between the active region 10 and the field region 20, a step where the field region 20 is treated thermally for discharging a residual evaporating substance after the opening section 112 is formed, and a step where the opening section 112 is oxidized thermally and buried. COPYRIGHT: (C)2005,JPO&NCIPI
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