SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device is provided to reduce a height difference between a field oxide region and an active region in a SAS(self-aligned source) region by forming grooves between gate lines and under a gate oxide layer. Linear trench lines are formed continuously formed in a semiconductor substrate(100). Gate oxide layer lines are formed on the semiconductor substrate except the trench lines. Gate lines are continuously formed on the trench lines and the gate oxide layer lines, vertical to the trench lines. Grooves are formed between the gate lines and under the gate oxide layer, exposing the semiconductor substrate.