| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory which is configured so that when two kinds of transistors exist in a chip, that is, when the chip is constituted of thin-film transistors and thick-film transistors, a circuit which is constituted of the thin-film transistors is made not to be destroyed. <P>SOLUTION: In the chip, a transistor 61 which electrically separates a sense amplifier SA which is constituted of the thin-film transistor and a data line BDE which is electrically connected to the sense amplifier SA is provided. When the data line BDE is driven by a write-in driver WDRV, the data line BDE is separated from the sense amplifier SA by inputting a control signal SEL ("H" level) to the transistor 61. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
