| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus wherein control of dose is enabled in plasma doping and dose can be controlled more precisely than the conventional case. SOLUTION: When dopant is introduced in a solid substrate with the plasma doping; the property of gas in plasma is measured by In-situ, the result of measurement by In-situ is fed back to the gas parameter of the plasma doping so as to become a desired amount of dopant introduction. Further, when feedback is performed to the parameter of the plasma doping, in order to obtain desired amount of dopant introduction, property of charged particles is previously measured, and the measurement results of the charged particles and the gas property are combined and calculated. Its combined result is fed back to the parameter of plasma doping, thereby enabling controlling the dose in consideration of both contribution of the charged particle and contribution of the gas. COPYRIGHT: (C)2005,JPO&NCIPI
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