| 摘要 |
<p>Provided is a method of manufacturing a thermoelectric device, including: forming a base substrate formed of a main raw material composed of Bi2(SeXTe1-X)3; milling the base substrate; changing a combination composition of any one material selected from Bi, Se and Te in the base substrate; adding and mixing and milling one or more materials selected from Ag, Au, Pt, Cu, Ni, and Al to and with the base substrate and milling them; and forming a thermoelectric semiconductor device by sintering the milled materials.</p> |
