<p>A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.</p>
申请公布号
WO2005031827(A2)
申请公布日期
2005.04.07
申请号
WO2004US31070
申请日期
2004.09.23
申请人
INTEL CORPORATION
发明人
JIN, BEEN-YIH;DOYLE, BRIAN;HARELAND, SCOTT;DOCZY, MARK;METZ, MATTHEW;BOYANOV, BOYAN;DATTA, SUMAN;KAVALIEROS, JACK;CHAU, ROBERT