发明名称 SEMICONDUCTOR CHANNEL ON INSULATOR STRUCTURE
摘要 <p>A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.</p>
申请公布号 WO2005031827(A2) 申请公布日期 2005.04.07
申请号 WO2004US31070 申请日期 2004.09.23
申请人 INTEL CORPORATION 发明人 JIN, BEEN-YIH;DOYLE, BRIAN;HARELAND, SCOTT;DOCZY, MARK;METZ, MATTHEW;BOYANOV, BOYAN;DATTA, SUMAN;KAVALIEROS, JACK;CHAU, ROBERT
分类号 H01L21/20;H01L21/336;H01L21/768;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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