| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the aspect ratio of a contact hole formed in an insulating layer in the forming region of a transfer device, in a substrate on which two kinds of semiconductor devices of the transfer device and a film forming device are formed in a mixed state. <P>SOLUTION: In the forming region of a single crystal Si thin film transistor 11, a relay pad 33 is formed at a predetermined place in the insulating layer thereof. Connecting wirings penetrating the insulating layer are formed as connecting wirings 34, 35 through the relay pad 33. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
