| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device having a structure which can lower a read voltage and obtain a wide dynamic range and higher sensitivity by increasing the accumulation amount of signal charge. SOLUTION: The solid state imaging device 1 is constituted to read signal charge e to a floating diffusion section 7 from a light receiving sensor 5 with the light receiving sensor 5 for generating signal charge e from incident light through photoelectric conversion, the floating diffusion section 7 for converting signal charge e to a voltage, a read gate 6 formed between the light receiving sensor 5 and the floating diffusion section 7, a first read electrode 121 formed on the read gate 6 in which a unit pixel 4 is formed by including an output for outputting the voltage converted by the floating diffusion section 7, and a second read electrode 122 formed on at least a part of the floating diffusion section 7. COPYRIGHT: (C)2005,JPO&NCIPI
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