| 摘要 |
A workpiece (fig 2: 34) such as a semiconductor wafer is pre-heated to an intermediate temperature (Fig 4: TI) then a surface (fig 2: 46) of the workpiece is heated rapidly, for a time period less than the thermal conduction time of the workpiece, to a temperature (fig 4: TD) greater than the intermediate temperature. An arc lamp or filament lamp (fig 2: 32) may be used for pre-heating, and a flashlamp or laser 68 may be used for heating. Radiation may be transmitted though selective filters between the radiation sources and the workpiece, comprising quartz windows which transmit radiation to the workpiece and which are cooled by a liquid flow, for example through channel 86 between a double quartz layer. The quartz windows may also absorb radiation thermally emitted by the workpiece, and further radiation absorbing surfaces may be provided to enhance cooling within the heating chamber. |
