SELECTIVE ISOTROPIC ETCH FOR TITANIUM-BASED MATERIALS

摘要

A selective isotropic etching process is provided to form an MEMS(Micro Electro Mechanical System) device without damage by avoiding a high temperature etching process using a temperature sensitive material such as a titanium based material. Plasma is generated from a gas containing fluorine. A structure(50) is kept in a predetermined temperature range of 100 or higher. An opening(61) is formed from an upper surface of the structure to a material layer(56). The material layer is exposed to the plasma through the opening, so that the material layer is etched.