发明名称 Multilayer semiconductor device for transmitting microwave signals and associated methods
摘要 A multilayer semiconductor device includes at least one structure for transmitting electrical signals, and in particular, microwave signals. The device includes at least one electrically conductive enclosure that includes a bottom plate and a top plate in two different layers. Lateral walls connect the bottom and top plates. Electrically conductive connecting strips extend into the enclosure and are in an intermediate layer, and are electrically insulated from the enclosure. The enclosure has at least one passage through which extends electrical connections of the connecting strips, which are also electrically insulated from the enclosure.
申请公布号 US6876076(B2) 申请公布日期 2005.04.05
申请号 US20020184027 申请日期 2002.06.27
申请人 发明人
分类号 H01L23/528;H01L23/66;(IPC1-7):H01L23/34 主分类号 H01L23/528
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