Magnetoresistive device and electronic device

摘要

A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.