| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer-processing apparatus which can suppress variations in wafer temperature, when the wafer has been processed continuously. SOLUTION: Wafers 1 are placed one by one on the ceramic plate 15 of a wafer stage 2 within a vacuum chamber 9; pressure of the thermoconductive gas, introduced between the wafer 1 and ceramic plate 15, is adjusted to control the temperature of wafer 1, and sequentially processing using plasma 6; and the process of reducing the variations in wafer temperature of the lot is selected by executing any of the processes for adjusting the pressure of heat conducting gas for each wafer, for optimizing the aging condition, and optimizing the heater condition. For the selected processing item, the processing condition is determined through calculation with a control computer of the processing apparatus to implement the process based on this determination. Since the wafer temperature variation in the lot can be lowered with simplified manipulations, the plasma processing ensuring very high reproducibility can be attained, even in processings which are particularly influenced by temperature. COPYRIGHT: (C)2005,JPO&NCIPI
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