ATTENUATING PHASE DEVIATION MASK BLANK AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide an attenuating phase deviation mask blank to be used in lithography and to provide a method for manufacturing the mask blank.

SOLUTION: The attenuating phase deviation mask comprises a substrate and a thin film system applied on one surface of the substrate and is to be used in lithography. The thin film system includes a phase deviation layer having a phase deviation control sublayer and a transmission control sublayer. The phase deviation mask is capable of producing a photomask having almost 180°phase deviation and at least 0.001% transmission for exposure at≤200 nm wavelength. The thin film system essentially is free from defects having≥0.5μm particle size.

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