| 摘要 |
PROBLEM TO BE SOLVED: To provide an avalanche photodetector with a high saturation output, high gain bandwidth product, low noise, high reaction speed, and low dark current. SOLUTION: The avalanche photodetector comprises a light absorption layer 420 formed of a first semiconductor, absorbing incident light to convert it into a carrier, and graded-doped or heavy-doped, a multiplying layer 450 formed of an undoped second semiconductor and receiving a carrier to multiply a current, a field buffer layer 440 formed of a third semiconductor, located between the light absorption layer and the multiplying layer, and concentrating an electric field on the multiplying layer when a bias voltage is applied, and a drift layer 430 formed of an undoped fourth semiconductor, located between the field buffer layer and the light absorption layer, and reducing the capacitance. COPYRIGHT: (C)2005,JPO&NCIPI
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