| 摘要 |
A method of manufacturing a semiconductor device is provided to remove defects from the device itself by using defect removing etching. An oxide layer, a floating gate conductive layer, a dielectric film and a control gate conductive layer are sequentially formed on a semiconductor substrate with an isolation layer. A gate structure is formed by patterning selectively the oxide layer, the floating gate conductive layer, the dielectric film and the control gate conductive layer. A self-aligned source mask pattern(26) is formed thereon. The isolation layer is removed from the resultant structure through the self-aligned source mask pattern. An ion-implantation is performed thereon. A damage removing process is performed on the resultant structure by using chemical dry-etching.
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