Semiconductor storage device

摘要

A semiconductor storage device detects a temperature T0 at which an output voltage Vtemp of the temperature detecting circuit equals to an output voltage Vref0 of the reference voltage generating circuit. In the lower temperature range lower than the temperature T0, the value of the reference voltage Vref is reduced by a preset voltage DeltaV from an external power supply voltage Vdd by a variable voltage generating circuit. The lowered voltage (Vdd-DeltaV) is applied to the word line WL of the memory cell via the word line driver as a variable power supply voltage Vcp.