发明名称 |
Fet type sensor, ion density detecting method comprising this sensor, and base sequence detecting method |
摘要 |
The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.
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申请公布号 |
US2005062093(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040495808 |
申请日期 |
2004.11.05 |
申请人 |
SAWADA KAZUAKI;UCHIYAMA MASAKATSU |
发明人 |
SAWADA KAZUAKI;UCHIYAMA MASAKATSU |
分类号 |
G01N27/414;(IPC1-7):H01L29/788 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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