FORMATION METHOD OF CRYSTALLINE SEMICONDUCTOR FILM, FORMATION METHOD OF THIN-FILM TRANSISTOR WITH THE CRYSTALLINE SEMICONDUCTOR FILM AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH THE CRYSTALLINE SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a new formation method of a crystalline semiconductor film which performs positional control of crystal grain and crystal grain boundary, and to provide especially a formation method of a crystalline semiconductor film, in which orientation of crystal grain is controlled. SOLUTION: Example is taken in the subject and a semiconductor film having metallic element is formed for expediting crystallization of an amorphous semiconductor film, an amorphous semiconductor film is formed in contact with the semiconductor film; a crystalline semiconductor film is formed with orientation controlled by metallic element; and a crystalline semiconductor film is formed by using the above semiconductor film as seed crystal. Especially, the amorphous semiconductor film for performing crystallization and the seed crystal touch point-like. COPYRIGHT: (C)2005,JPO&NCIPI