| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film piezoelectric resonator having superior resonating operation and mounted directly on an Si substrate for realizing its formation in a thin film process. <P>SOLUTION: The thin film piezoelectric resonator 30 has a resonator 33 on a substrate 31, and the piezoelectric film 5 of the resonator 33 has a rhombohedral structure and made of titanic acid zirconic acid lead oriented with pseudo cubical crystal (100). The thin film piezoelectric resonator 30 is desirably composed of a buffer layer 3 formed on the substrate in an ion beam assist method, a lower perovskite type electrode 4 formed on the buffer layer 3, a piezoelectric thin film 5 formed on the lower electrode 4, and an upper electrode 6 formed on the piezoelectric thin film 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
