发明名称 |
Mask manufacturing method |
摘要 |
A mask manufacturing method includes a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening; and a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in the first step. |
申请公布号 |
US2005064301(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040931985 |
申请日期 |
2004.09.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI TAKAKO;INAO YASUHISA |
分类号 |
G03F1/08;G03C5/00;G03F1/14;G03F1/24;G03F1/68;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G03C5/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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