| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can form a contact having a large enough size by securing a mis-alignment margin required at the time of contact formation, and its manufacturing method. <P>SOLUTION: The device includes a substrate, an insulating film formed on the substrate, first wiring formed on the insulating film and provided with a first mask layer having a first etching corrosion part, second wiring formed on one side of the first wiring and provided with a third mask layer having a second etching corrosion part at the upper corner as opposed to the first etching corrosion part, third wiring formed on the other side of the first wiring and provided with a third conductive layer and the third mask layer, first to third spacers formed respectively at the side walls of the first to third wiring, and a first and a second electric conductor in contact with the contact region of the substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
