| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which determination of data is not influenced by the existence of a capacity between bit lines. <P>SOLUTION: The nonvolatile semiconductor storage device includes a 1st memory cell in which the power conductive/non-conductive state is substantially controlled in accordance with stored data, the 1st bit line connected to the 1st memory cell, a reference cell connected to the 1st bit line for allowing a 2nd current smaller than a 1st current flowing in the conductive state flow to the 1st memory cell, the 2nd bit line, a 2nd memory cell connected to the 2nd bit line for allowing the 1st current flow, and a sense amplifier electrically connected to the 1st bit line and 2nd bit line. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
