发明名称 |
Antireflective coating for use during the manufacture of a semiconductor device |
摘要 |
An antireflective layer formed from boron-doped amorphous carbon can be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer can be removed by exposing the layer to an oxygen plasma (i.e. an "ashing" process), preferably concurrently with the ashing and removal of an overlying photoresist layer. An inventive process which uses the inventive antireflective layer is also described.
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申请公布号 |
US2005064718(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030671186 |
申请日期 |
2003.09.24 |
申请人 |
YIN ZHIPING;SANDHU GURTEJ S. |
发明人 |
YIN ZHIPING;SANDHU GURTEJ S. |
分类号 |
H01L21/02;H01L21/027;H01L21/033;H01L21/311;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/302;H01L21/461 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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