Method and its apparatus for manufacturing semiconductor device

摘要

Deviations from optimum values of the exposure light quantity and focus of test and product circuit patterns are predicted from the dimensions of the patterns, illumination conditions and the wave aberration of an exposure lens. A signal waveform of scatterometry of the test pattern is linked to the deviations from the optimum values of the exposure light quantity and focus to form a library. The test pattern after exposed and developed in actual steps is collated with the signal waveform in the library measured by the scatterometry to find deviations from the optimum values of the exposure light quantity and focus of the test pattern. Deviations of the optimum values of a product circuit pattern from the deviations of the test pattern are acquired on the basis of the deviations, and the acquired deviations are fed back to subsequent exposure steps.