| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory provided with a built-in test circuit in which a bit of which the resistance value is other than a fixed value or a bit in which an asteroid property is shifted can be detected in a shorter test time and in a previous stage, throughput at the time of mass production is high, and which can contribute to the reduction of a manufacturing cost. SOLUTION: The built-in test circuit is provided in an MRAM. This test circuit detects a bit in which a shift is caused in a write-in property in a memory cell array 1 as a defective bit using a method by which one axis write-in current of a difficult axis direction is applied. Thereby, a chip having defective bits of the prescribed numbers or more and enabled to be relieved can be discriminated in a short test time. COPYRIGHT: (C)2005,JPO&NCIPI
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