METHOD FOR REMOVING RESIST, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for removing a resist for surely removing the resist forming a pattern on an insulating film consisting of a low dielectric constant film without damaging the low dielectric constant film, and to provide a method for manufacturing a semiconductor device. SOLUTION: The method for removing the resist and the method for manufacturing the semiconductor device using it includes: a process for permeating ozone water into a first resist 31 by supplying the ozone water on the surface of a substrate 21 in a removing method of the first resist 31 forming the pattern through a third interlayer insulating film 24 on the substrate 21; a process for decomposing the first resist 31 by having energy generating a radical by decomposing ozone in the ozone water for the first resist 31 of a state where the ozone water permeates, and irradiating light of a wavelength having lower energy than coupling energy of a constitution material of the third interlayer insulating film 24; and a process for removing the first resist 31 decomposed by washing the surface of the substrate 21. COPYRIGHT: (C)2005,JPO&NCIPI