ETCHING METHOD AND METHOD OF MANUFACTURING CIRCUIT DEVICE USING THE SAME

摘要

An etching method and a method for manufacturing a circuit device using the same are provided to improve etching factors and to decrease the size of a resultant conductive pattern by using a resist with a widening lower portion as an etching mask. An etching resist(10) is formed on a material to be etched(11). The etching resist(10) is selectively deformed by selectively exposing the etching resist to a light using an exposure mask(14). A residual region(10B) with a cross section has a lower portion which is larger than an upper portion. A liquid is used to remove the etching resist(10) outside the residual region(10B). The material to be etched(11) is etched by using the residual region(10B) as a mask.