METHOD OF MANUFACTURING FLASH MEMORY DEVICE WITH POLYSILICON LAYERS CONNECTED PHYSICALLY ELECTRICALLY WITH EACH OTHER

摘要

PURPOSE: A method of manufacturing a flash memory device is provided to improve the degree of integration as well as the contact resistance and sheet resistance of a select line by connecting electrically all polysilicon layers in person through a dielectric removed portion. CONSTITUTION: A substrate(301) with isolation layers(305) and first polysilicon patterns(306) is provided. A dielectric layer is formed on the entire surface of the resultant structure. The dielectric layer is selectively removed from the first polysilicon patterns. A second polysilicon layer(308) and a conductive material layer(309) are sequentially formed thereon. A select line and a word line are formed by performing a patterning process on the resultant structure.