| 发明名称 |
Multiple gate semiconductor device and method for forming same |
| 摘要 |
A multiple gate semiconductor device. The device includes at least two gates. The dopant distribution in the semiconductor body of the device varies from a low value near the surface of the body towards a higher value inside the body of the device.
|
| 申请公布号 |
US2005051812(A1) |
申请公布日期 |
2005.03.10 |
| 申请号 |
US20040893185 |
申请日期 |
2004.07.16 |
| 申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC VZW) |
发明人 |
DIXIT ABHISEK;MEYER KRISTIN DE |
| 分类号 |
H01L21/336;H01L29/10;H01L29/786;(IPC1-7):H01L21/338;H01L27/148;H01L29/76;H01L31/062 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
