METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO AVOID DEVICE FAIL IN PCT,申请号KR19970077915-传众专利搜索

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发明名称	METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO AVOID DEVICE FAIL IN PCT
摘要
申请公布号	KR100477821(B1)	申请公布日期	2005.03.10
申请号	KR19970077915	申请日期	1997.12.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, JEONG SEOK;NAM, GI WON;KIM, GWANG CHEOL
分类号	H01L21/283;(IPC1-7):H01L21/283	主分类号	H01L21/283
代理机构		代理人
主权项
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