发明名称 PLASMA TREATMENT APPARATUS AND ASHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus wherein plasma treatment like ashing is enabled based on a way of thinking different from a conventional one without causing unnecessary damage, even when plasma treatment to a low dielectric constant material etc. is performed, and to provide an ashing method. SOLUTION: The plasma treatment apparatus is provided with a chamber which can maintain an atmosphere reduced in pressure lower than that of the air, a guide tube connected to the chamber, a gas introducing mechanism which introduces gas into the guide tube, and a microwave supply source which introduces a microwave from the exterior of the guide tube to the inside. In the plasma treatment apparatus, the plasma of the gas is formed in the guide tube, and plasma treatment to a workpiece installed in the chamber is enabled. The guide tube is connected so that an aperture is formed on the inner wall of the chamber of which the inner wall is almost perpendicular to the main surface of the workpiece. The workpiece is not arranged on a straight sight line viewed from the plasma. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064037(A) 申请公布日期 2005.03.10
申请号 JP20030207379 申请日期 2003.08.12
申请人 SHIBAURA MECHATRONICS CORP 发明人 IINO YOSHINORI
分类号 H01L21/3065;G03F7/42;H01J37/32;H01L21/311;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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