| 摘要 |
PROBLEM TO BE SOLVED: To reduce the bias effect of a substrate in an SGT or S-SGT. SOLUTION: A semiconductor device includes a memory cell having a semiconductor substrate, a first-conductivity columnar semiconductor layer formed on the semiconductor substrate, second-conductivity source and drain diffusion layers formed in the upper and lower parts of the semiconductor layer, and gate electrodes formed on the side faces of the semiconductor layer through gate insulating films. The semiconductor device is also provided with a second-conductivity semiconductor layer and an insulator or cavity in the columnar semiconductor layer. COPYRIGHT: (C)2005,JPO&NCIPI
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