| 摘要 |
A method of forming the patterns of a semiconductor device uses a photomask employed therein is disclosed. In a semiconductor device having a first region where a plurality of first patterns are separated from each other by a first space and a plurality of second patterns having a larger size than that of the first patterns are separated from each other by a second space that is wider than the first space, the first and second regions being formed on the same layer, a fine gap for transmitting light is formed in a central portion of a mask pattern that corresponds to the second pattern on the photomask for patterning the first and second patterns to reduce the proximity effect. Lifting margin and bridge margin with respect to a pattern where the pattern pitch varies are improved through the use of the fine gap. |
