发明名称 Fabrication of electronic devices
摘要 <p>A method for forming pores within a central area of a semi-conductive or conductive surface (114) includes forming on a substrate (112) a semi-conductive or conductive surface (114) such that, upon application of an electric field at the semi-conductive or conductive surface (114), an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. The method includes anodizing the semi-conductive or conductive surface (114) by generating the electric field at the semi-conductive or conductive surface (114) to form a porous region within the semi-conductive or conductive surface (114). &lt;IMAGE&gt;</p>
申请公布号 EP1513181(A1) 申请公布日期 2005.03.09
申请号 EP20040254758 申请日期 2004.08.06
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 KUO, HUEI-PEI;SHENG, XIA;BIRECKI, HENRYK;LAM, SI-TY;NABERHUIS, STEVEN L.
分类号 H01J1/312;H01J9/02;(IPC1-7):H01J1/312 主分类号 H01J1/312
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