发明名称 |
Fabrication of electronic devices |
摘要 |
<p>A method for forming pores within a central area of a semi-conductive or conductive surface (114) includes forming on a substrate (112) a semi-conductive or conductive surface (114) such that, upon application of an electric field at the semi-conductive or conductive surface (114), an intensity of the electric field at a central area of the surface is at least as great as an intensity of the electric field at a perimeter of the surface. The method includes anodizing the semi-conductive or conductive surface (114) by generating the electric field at the semi-conductive or conductive surface (114) to form a porous region within the semi-conductive or conductive surface (114). <IMAGE></p> |
申请公布号 |
EP1513181(A1) |
申请公布日期 |
2005.03.09 |
申请号 |
EP20040254758 |
申请日期 |
2004.08.06 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
KUO, HUEI-PEI;SHENG, XIA;BIRECKI, HENRYK;LAM, SI-TY;NABERHUIS, STEVEN L. |
分类号 |
H01J1/312;H01J9/02;(IPC1-7):H01J1/312 |
主分类号 |
H01J1/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|