ION DOPPING APPARATUS AND DOPPING METHOD

摘要

An ion doping apparatus is provided to perform a doping process on a substrate of a large area by generating plasma ions and by accelerating the plasma ions to form an ion flow. An ion source generates ions of dopant gas. An extraction electrode extracts the ions of the dopant gas to form an ion flow of the dopant gas. The first magnetic field applying unit applies the first magnetic field to the ion flow. The second magnetic field applying unit applies the second magnetic field to the ion flow after the first magnetic field is applied. The first magnetic field has the same dimension as the second magnetic field and is opposite in direction to the second magnetic field.