发明名称 |
Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition |
摘要 |
A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.
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申请公布号 |
US6864181(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030402600 |
申请日期 |
2003.03.27 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
REDEKER FRED C.;BOYD JOHN |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/311;C03C15/00;H01L23/48 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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